SCOPUS 정보 검색 플랫폼

Volumn 80, Issue 10, 2002, Pages 1770-1772

Current transport in InP/In0.5(Al0.6Ga 0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy

(4) Reddy, C V a Narayanamurti, V a Ryou, J H b Dupuis, R D b

a HARVARD UNIVERSITY (United States)

b The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON EMISSION MICROSCOPY; CHARGE ACCUMULATION; CHARGE CONFINEMENT; CURRENT TRANSPORT; INALGAP; INP; INP QUANTUM DOTS; QUASI-BOUND STATE; SELF ASSEMBLED QUANTUM DOTS; SELF-ASSEMBLED; TIP BIAS;

BALLISTICS; GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

ELECTRON EMISSION;

EID: 79956046182 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1458689 Document Type: Article

Times cited : (5)

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