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Volumn 81, Issue 7, 2002, Pages 1359-

Erratum: Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes (Applied Physics Letters (2002) 80 (3817))

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EID: 79956045848     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1502905     Document Type: Erratum
Times cited : (19)

References (17)
  • 12
    • 79957936689 scopus 로고    scopus 로고
    • note
    • Due to the presence of the top gate, we were unable to obtain a direct measurement of the CNT diameter. However, the device characteristics - the steepness of the subthreshold slope in particular - are consistent with the behavior of a single SWNT device. (CNFETs with more than a very small number of nanotubes turn on gradually.) Thus, the normalized values given represent an upper bound.
  • 13
    • 79957953558 scopus 로고    scopus 로고
    • J. Guo, S. Goasguen, M. Lundstrom, and D. Datta (private communication)
    • J. Guo, S. Goasguen, M. Lundstrom, and D. Datta (private communication).
  • 17
    • 79957961250 scopus 로고    scopus 로고
    • J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris (unpublished)
    • J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and Ph. Avouris (unpublished).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.