Positively charged magnetoexciton transitions in a p-doped GaAs/Al 0.45Ga0.55As single heterojunction

Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 2020-2022

  Kim, Yongmin ^a,b   Jiang, H W ^c  

^a Dankook University   (South Korea)

^b Dongguk University   (South Korea)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONIC COMPLEXES; FREE CARRIERS; GAAS; INITIAL VALUES; NEUTRAL EXCITONS; POSITIVELY CHARGED; POSITIVELY CHARGED EXCITONS; QUANTUM LIMIT;

EXCITONS; GALLIUM; HETEROJUNCTIONS; MAGNETIC FIELDS; PHOSPHORUS; SEMICONDUCTOR QUANTUM WELLS;

BINDING ENERGY;

EID: 79956042083     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506418     Document Type: Article

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