Laser-induced lateral epitaxy in fully depleted silicon-on-insulator junctions

Applied Physics Letters

Volumn 81, Issue 12, 2002, Pages 2238-2240

  Dezfulian, Kevin K ^a   Krusius, J Peter ^a   Thompson, Michael O ^a   Talwar, Somit ^b  

^a Cornell University   (United States)

^b Ultratech Stepper Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL EDGES; DEFECT-FREE; FULLY DEPLETED SILICON-ON-INSULATOR; IN-SITU; JUNCTION FORMATION; LASER INDUCED; LATERAL EPITAXY; OPTICAL REFLECTANCE; SELECTIVE LASER MELTING; TRANSIENT CONDUCTION;

AMORPHOUS FILMS; DEFECT DENSITY; EPITAXIAL GROWTH; SILICA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956027401     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1507359     Document Type: Article

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