Structural study of a commensurate phase at Co/Si(111) interface using in situ surface x-ray scattering

Applied Physics Letters

Volumn 81, Issue 15, 2002, Pages 2776-2778

  Kang, T S ^a   Je, J H ^a   Kim, H J ^b   Noh, D Y ^b   Kim, N D ^a   Chung, J W ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STOICHIOMETRY; CRYSTAL TRUNCATION ROD; IN-SITU; IN-SITU SYNCHROTRONS; INITIAL STAGES; INTENSITY OSCILLATIONS; INTERFACIAL STRUCTURES; LARGE STRAINS; LAYER-WISE; LONG RANGE ORDERS; REACTION STOICHIOMETRY; ROOM TEMPERATURE; SI (1 1 1); SI SUBSTRATES; SILICIDE LAYERS; SILICON SUBSTRATES; STRUCTURAL STUDIES; SURFACE X-RAY SCATTERING;

CARBON DIOXIDE; COBALT; MONOLAYERS; SILICIDES; SILICON; STOICHIOMETRY; SURFACE STRUCTURE; X RAY SCATTERING;

SCATTERING;

EID: 79956021576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1513658     Document Type: Article

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