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Volumn 80, Issue 8, 2002, Pages 1337-1339

Growth of epitaxial NdNiO3 and integration with Si(100)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT OXYGEN; CHARGE-TRANSFER GAP; DOMAIN MATCHING EPITAXY; FOUR-ORDER; HIGH QUALITY; LATTICE MATCHING; M-I TRANSITION; METAL INSULATORS; POLYCRYSTALLINE FILM; SI (100) SUBSTRATE; SI(1 0 0); SRTIO;

EID: 79955997554     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1451984     Document Type: Article
Times cited : (14)

References (15)
  • 10
    • 79957944340 scopus 로고
    • U.S. Patent No. 5, 406, 123 (April 11)
    • J. Narayan, U.S. Patent No. 5, 406, 123 (April 11, 1995).
    • (1995)
    • Narayan, J.1
  • 15


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.