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Volumn 80, Issue 8, 2002, Pages 1337-1339
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Growth of epitaxial NdNiO3 and integration with Si(100)
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
AMBIENT OXYGEN;
CHARGE-TRANSFER GAP;
DOMAIN MATCHING EPITAXY;
FOUR-ORDER;
HIGH QUALITY;
LATTICE MATCHING;
M-I TRANSITION;
METAL INSULATORS;
POLYCRYSTALLINE FILM;
SI (100) SUBSTRATE;
SI(1 0 0);
SRTIO;
CHARGE TRANSFER;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
LATTICE CONSTANTS;
METAL INSULATOR BOUNDARIES;
METAL INSULATOR TRANSITION;
PULSED LASER DEPOSITION;
SILICON;
STRONTIUM ALLOYS;
STRONTIUM TITANATES;
TITANIUM NITRIDE;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79955997554
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1451984 Document Type: Article |
Times cited : (14)
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References (15)
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