Temperature dependence of the growth front roughening of oligomer films

Applied Physics Letters

Volumn 80, Issue 24, 2002, Pages 4528-4530

  Tsamouras, D ^a   Palasantzas, G ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; ARRHENIUS; CORRELATION LENGTHS; DIFFUSIVE GROWTH; ELEVATED TEMPERATURE; GROWTH FRONT; LOW SUBSTRATE TEMPERATURE; PENTAMERS; ROOT MEAN SQUARE ROUGHNESS; ROTATIONAL BARRIERS; ROUGHNESS EXPONENT; SILICON SUBSTRATES; SUBSTRATE TEMPERATURE; TEMPERATURE DEPENDENCE; VACANCY FORMATION;

BENZENE; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

OLIGOMERS;

EID: 79955997068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484250     Document Type: Article

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