Pressure behavior of Te isoelectronic centers in ZnS:Te

Applied Physics Letters

Volumn 81, Issue 17, 2002, Pages 3170-3172

  Fang, Z L ^a   Su, F H ^a   Ma, B S ^a   Ding, K ^a   Han, H X ^a   Li, G H ^a   Sou, I K ^b   Ge, W K ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION BANDS; ISOELECTRONIC CENTERS; PRESSURE COEFFICIENTS; PRESSURE SHIFT; PRESSURE-INDUCED ENHANCEMENT;

ENERGY GAP; HYDROSTATIC PRESSURE;

ZINC SULFIDE;

EID: 79955983674     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517171     Document Type: Article

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