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Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 1165-1170

Solution growth and thermoelectric properties of single-phase MnSi 1.75-x

(6) Udono, H a Nakamori, K a Takahashi, Y a Ujiie, Y a Ohsugi, I J b Iida, T c

a IBARAKI UNIVERSITY (Japan)

b Salesio Polytechnic (Japan)

c TOKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

HMS; semiconducting silicides; Temperature gradient solution growth; thermoelectric property

Indexed keywords

ELECTRICAL CONDUCTION; HMS; MELT-GROWN; POWER FACTORS; SEMICONDUCTING SILICIDES; SOLUTION GROWTH; TEMPERATURE GRADIENT; TEMPERATURE GRADIENT SOLUTION GROWTH; THERMOELECTRIC PROPERTIES;

CRYSTAL GROWTH; ELECTRIC POWER FACTOR; ELECTRIC PROPERTIES; GALLIUM ALLOYS; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTING SILICON; SILICIDES; SILICON; THERMAL CONDUCTIVITY; THERMAL GRADIENTS; THERMOELECTRIC EQUIPMENT; TIN;

SINGLE CRYSTALS;

EID: 79955912101 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1561-9 Document Type: Conference Paper

Times cited : (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.