-
1
-
-
0000793139
-
Cramming more components onto integrated circuits
-
Moore G. Cramming more components onto integrated circuits. Electronics, 1965, 38: 114-117
-
(1965)
Electronics
, vol.38
, pp. 114-117
-
-
Moore, G.1
-
2
-
-
0016116644
-
Design of ion-implanted MOSFET's with very small physical dimensions
-
Dennard R, Gaensslen F, Yu H, et al. Design of ion-implanted MOSFET's with very small physical dimensions. IEEE J Solid-State Circ, 1974, 9: 256-268
-
(1974)
IEEE J Solid-State Circ
, vol.9
, pp. 256-268
-
-
Dennard, R.1
Gaensslen, F.2
Yu, H.3
-
3
-
-
50249185641
-
A 45 nm logic technology with high-k metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging
-
In
-
Mistry K, Allen C, Auth C, et al. A 45 nm logic technology with high-k metal gate transistors, strained silicon, 9 Cu interconnect layers, 193 nm dry patterning, and 100% Pb-free packaging. In: IEDM Tech Dig, 2007. 247-250
-
(2007)
IEDM Tech Dig
, pp. 247-250
-
-
Mistry, K.1
Allen, C.2
Auth, C.3
-
4
-
-
36448952970
-
High-performance high-k/metal gates for 45 nm CMOS and beyond with gate-first processing
-
In
-
Chudzik M, Boris B, Mo R, et al. High-performance high-k/metal gates for 45 nm CMOS and beyond with gate-first processing. In: VLSI Tech Dig, 2007. 194-195
-
(2007)
VLSI Tech Dig
, pp. 194-195
-
-
Chudzik, M.1
Boris, B.2
Mo, R.3
-
5
-
-
33846693940
-
Piezoresistance effect in germanium and silicon
-
Smith C. Piezoresistance effect in germanium and silicon. Phys Rev, 1954, 94: 42-49
-
(1954)
Phys Rev
, vol.94
, pp. 42-49
-
-
Smith, C.1
-
7
-
-
0000741169
-
Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
-
Takagi S, Hoyt J, Welser J, et al. Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors. J Appl Phys, 1996, 80: 1567-1577
-
(1996)
J Appl Phys
, vol.80
, pp. 1567-1577
-
-
Takagi, S.1
Hoyt, J.2
Welser, J.3
-
10
-
-
0043269756
-
Six-band k·p calculation of the hold mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
-
Fischetti M, Ren Z, Solomon P, et al. Six-band k·p calculation of the hold mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness. J Appl Phys, 2003, 94: 1079-1095
-
(2003)
J Appl Phys
, vol.94
, pp. 1079-1095
-
-
Fischetti, M.1
Ren, Z.2
Solomon, P.3
-
11
-
-
0015048648
-
Piezoresistance in quantized conduction bands in silicon inversion layers
-
Dorda G. Piezoresistance in quantized conduction bands in silicon inversion layers. J Appl Phys, 1971, 42: 2053-2060
-
(1971)
J Appl Phys
, vol.42
, pp. 2053-2060
-
-
Dorda, G.1
-
12
-
-
0000863124
-
Mobility anisotropy and piezoresistance in silicon p-type inversion layers
-
Colman D, Bate R, Mize J. Mobility anisotropy and piezoresistance in silicon p-type inversion layers. J Appl Phys, 1968, 39: 1923-1931
-
(1968)
J Appl Phys
, vol.39
, pp. 1923-1931
-
-
Colman, D.1
Bate, R.2
Mize, J.3
-
13
-
-
46149113480
-
Future of strained Si/semiconductors in nanoscale MOSFETs
-
In
-
Thompson S, Suthram S, Sun Y, et al. Future of strained Si/semiconductors in nanoscale MOSFETs. In: IEDM Tech. Dig., 2006. 681-684
-
(2006)
IEDM Tech. Dig
, pp. 681-684
-
-
Thompson, S.1
Suthram, S.2
Sun, Y.3
-
14
-
-
19944433396
-
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
-
Lee M, Fitzgerald E, Bulsara M, et al. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J Appl Phys, 2005, 97: 011101
-
(2005)
J Appl Phys
, vol.97
, pp. 011101
-
-
Lee, M.1
Fitzgerald, E.2
Bulsara, M.3
-
15
-
-
8344236776
-
A 90-nm logic technology featuring strained-silicon
-
Thompson S, Armstrong M, Auth C, et al. A 90-nm logic technology featuring strained-silicon. IEEE Trans Electr Dev, 2004, 51: 1790-1797
-
(2004)
IEEE Trans Electr Dev
, vol.51
, pp. 1790-1797
-
-
Thompson, S.1
Armstrong, M.2
Auth, C.3
-
17
-
-
46049096986
-
High performance 45-nm SOI Technology with enhanced stress, porous low-k BEOL and immersion lithography
-
In
-
Narasimha S, Onishi K, Nayfeh H, et al. High performance 45-nm SOI Technology with enhanced stress, porous low-k BEOL and immersion lithography. In: IEDM Tech Dig, 2006. 689-692
-
(2006)
IEDM Tech Dig
, pp. 689-692
-
-
Narasimha, S.1
Onishi, K.2
Nayfeh, H.3
-
18
-
-
21644478626
-
A systematic study of trade-offs in engineering a locally strained pMOSFET
-
In
-
Nouri F, Verheyen P, Washington L, et al. A systematic study of trade-offs in engineering a locally strained pMOSFET. In: IEDM Tech Dig, 2004. 1055-1058
-
(2004)
IEDM Tech Dig
, pp. 1055-1058
-
-
Nouri, F.1
Verheyen, P.2
Washington, L.3
-
19
-
-
33847717077
-
High performance 30 nm gate bulk CMOS for 45 nm node with Σ-shaped SiGe-SD
-
In
-
Ohta H, Kim Y, Shimamune Y, et al. High performance 30 nm gate bulk CMOS for 45 nm node with Σ-shaped SiGe-SD. In: IEDM Tech Dig, 2005. 247-250
-
(2005)
IEDM Tech Dig
, pp. 247-250
-
-
Ohta, H.1
Kim, Y.2
Shimamune, Y.3
-
21
-
-
0036923437
-
Novel locally strained channel technique for high performance 55 nm CMOS
-
In
-
Ota K, Sugihara K, Sayama H, et al. Novel locally strained channel technique for high performance 55 nm CMOS. In: IEDM Tech Dig, 2002. 27-30
-
(2002)
IEDM Tech Dig
, pp. 27-30
-
-
Ota, K.1
Sugihara, K.2
Sayama, H.3
-
22
-
-
64549146610
-
Physical and electrical analysis of the stress memorization technique (SMT) using poly-gates and its optimization for beyond 45-nm high-performance applications
-
In
-
Miyashita T, Owada T, Hatada A, et al. Physical and electrical analysis of the stress memorization technique (SMT) using poly-gates and its optimization for beyond 45-nm high-performance applications. In: IEDM Tech Dig, 2008. 55-58
-
(2008)
IEDM Tech Dig
, pp. 55-58
-
-
Miyashita, T.1
Owada, T.2
Hatada, A.3
-
23
-
-
68349137943
-
Stress memorization technique-fundamental understanding and low-cost integration for advanced CMOS technology using a nonselective process
-
Ortolland C, Okuno Y, Verheyen P, et al. Stress memorization technique-fundamental understanding and low-cost integration for advanced CMOS technology using a nonselective process. IEEE Trans Electr Dev, 2009, 56: 1690-1697
-
(2009)
IEEE Trans Electr Dev
, vol.56
, pp. 1690-1697
-
-
Ortolland, C.1
Okuno, Y.2
Verheyen, P.3
-
24
-
-
4544382132
-
Stress memorization technique (SMT) by selectively strained nitirde capping for sub-65 nm high-performance strained-Si device application
-
In
-
Chen C, Lee T, Hou T, et al. Stress memorization technique (SMT) by selectively strained nitirde capping for sub-65 nm high-performance strained-Si device application. In: Symp VLSI Tech Dig, 2004. 56-57
-
(2004)
Symp VLSI Tech Dig
, pp. 56-57
-
-
Chen, C.1
Lee, T.2
Hou, T.3
-
25
-
-
47249101504
-
Management of power and performance with stress memorization technique for 45 nm CMOS
-
In
-
Eiho A, Samuki T, Morifuji E, et al. Management of power and performance with stress memorization technique for 45 nm CMOS. In: Symp VLSI Tech Dig, 2007. 218-219
-
(2007)
Symp VLSI Tech Dig
, pp. 218-219
-
-
Eiho, A.1
Samuki, T.2
Morifuji, E.3
-
26
-
-
41149150847
-
Stress memorization technique (SMT) optimization for 45 nm CMOS
-
In
-
Ortolland C, Morin P, Chaton C, et al. Stress memorization technique (SMT) optimization for 45 nm CMOS. In: Symp VLSI Tech Dig, 2006. 78-79
-
(2006)
Symp VLSI Tech Dig
, pp. 78-79
-
-
Ortolland, C.1
Morin, P.2
Chaton, C.3
-
27
-
-
40949162000
-
Multiple stress memorization in advanced SOI CMOS technologies
-
In
-
Wei A, Wiatr M, Gehring A, et al. Multiple stress memorization in advanced SOI CMOS technologies. In: Symp VLSI Tech Dig, 2007. 216-217
-
(2007)
Symp VLSI Tech Dig
, pp. 216-217
-
-
Wei, A.1
Wiatr, M.2
Gehring, A.3
-
28
-
-
0034452586
-
Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design
-
In
-
Ito S, Namba H, Yamaguchi K, et al. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design. In: IEDM Tech Dig, 2000. 247-250
-
(2000)
IEDM Tech Dig
, pp. 247-250
-
-
Ito, S.1
Namba, H.2
Yamaguchi, K.3
-
29
-
-
0035715857
-
Local mechanical-stress control (LMC): A new technique for CMOS-preformance enhancement
-
In
-
Shimizu A, Hachimine K, Ohki N, et al. Local mechanical-stress control (LMC): a new technique for CMOS-preformance enhancement. In: IEDM Tech Dig, 2001. 433-436
-
(2001)
IEDM Tech Dig
, pp. 433-436
-
-
Shimizu, A.1
Hachimine, K.2
Ohki, N.3
-
30
-
-
21644452652
-
Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing
-
In
-
Yang H, Malik R, Narasimha S, et al. Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing. In: IEDM Tech Dig, 2004. 1075-1077
-
(2004)
IEDM Tech Dig
, pp. 1075-1077
-
-
Yang, H.1
Malik, R.2
Narasimha, S.3
-
31
-
-
33847739343
-
High performance 65 nm SOI technology with enhanced transistor strain and advancedlow-k BEOL
-
In
-
Lee W, Waite A, Nii H, et al. High performance 65 nm SOI technology with enhanced transistor strain and advancedlow-k BEOL. In: IEDM Tech Dig, 2005. 61-64
-
(2005)
IEDM Tech Dig
, pp. 61-64
-
-
Lee, W.1
Waite, A.2
Nii, H.3
-
32
-
-
21644483769
-
A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films
-
In
-
Pidin S, Mori T, Inoue K, et al. A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films. In: IEDM Tech Dig, 2004. 213-216
-
(2004)
IEDM Tech Dig
, pp. 213-216
-
-
Pidin, S.1
Mori, T.2
Inoue, K.3
-
33
-
-
4544268942
-
MOSFET current drive optimization using Silicon nitride capping layer for 65-nm technology node
-
In
-
Pidin S, Mori T, Nakamura R, et al. MOSFET current drive optimization using Silicon nitride capping layer for 65-nm technology node. In: Symp. VLSI Tech Dig, 2004. 54-55
-
(2004)
Symp. VLSI Tech Dig
, pp. 54-55
-
-
Pidin, S.1
Mori, T.2
Nakamura, R.3
-
34
-
-
21644481063
-
Technology booster using strain-enhancing laminated SiN (SELS) for 65 nm node HP MPUs
-
In
-
Goto K, Satoh S, Ohta H, et al. Technology booster using strain-enhancing laminated SiN (SELS) for 65 nm node HP MPUs. In: IEDM Tech Dig, 2004. 209-212
-
(2004)
IEDM Tech Dig
, pp. 209-212
-
-
Goto, K.1
Satoh, S.2
Ohta, H.3
-
35
-
-
43749102080
-
Manufacturable processes for ≤32-nm-node CMOS enhancement by synchronous optimization of strain-engineered channel and external parasitic resistances
-
Noori A, Balseanu M, Boelen P, et al. Manufacturable processes for ≤32-nm-node CMOS enhancement by synchronous optimization of strain-engineered channel and external parasitic resistances. IEEE Trans Electr Dev, 2008, 55: 1259-1264
-
(2008)
IEEE Trans Electr Dev
, vol.55
, pp. 1259-1264
-
-
Noori, A.1
Balseanu, M.2
Boelen, P.3
-
36
-
-
47249096503
-
A new liner stressor with very high intrinsic stress (>6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained P-channel transistors
-
In
-
Tan K, Zhu M, Fang W, et al. A new liner stressor with very high intrinsic stress (>6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained P-channel transistors. In: IEDM Tech Dig, 2007. 127-130
-
(2007)
IEDM Tech Dig
, pp. 127-130
-
-
Tan, K.1
Zhu, M.2
Fang, W.3
-
37
-
-
34447264710
-
Stress proximity technique for performance improvement with dual stress liner at 45 nm technology and beyond
-
In
-
Chen X, Gao W, Dyer T, et al. Stress proximity technique for performance improvement with dual stress liner at 45 nm technology and beyond. In: Symp VLSI Tech Dig, 2006. 60-61
-
(2006)
Symp VLSI Tech Dig
, pp. 60-61
-
-
Chen, X.1
Gao, W.2
Dyer, T.3
-
38
-
-
63149143221
-
Recent progress and challenges in enabling embedded Si:C technology
-
Yang B, Ren Z, Takalkar R, et al. Recent progress and challenges in enabling embedded Si:C technology. ECS Meet, 2008, 16: 317-323
-
(2008)
ECS Meet
, vol.16
, pp. 317-323
-
-
Yang, B.1
Ren, Z.2
Takalkar, R.3
-
39
-
-
43549108886
-
Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy
-
In
-
Liu Y, Gluschenkov O, Li J, et al. Strained Si channel MOSFETs with embedded silicon carbon formed by solid phase epitaxy. In: Symp VLSI Tech Dig, 2007. 44-45
-
(2007)
Symp VLSI Tech Dig
, pp. 44-45
-
-
Liu, Y.1
Gluschenkov, O.2
Li, J.3
-
40
-
-
64549099012
-
High-performance nMOS with in situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
-
In
-
Yang B, Takalkar R, Ren Z, et al. High-performance nMOS with in situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor. In: IEDM Tech Dig, 2008. 51-54
-
(2008)
IEDM Tech Dig
, pp. 51-54
-
-
Yang, B.1
Takalkar, R.2
Ren, Z.3
-
41
-
-
78650544080
-
Epitaxial growth of Si:C alloys: Process development and challenges
-
Dube A, Chakravarti A, Takalkar R, et al. Epitaxial growth of Si:C alloys: process development and challenges. ECS Meet, 2010, 28: 63-71
-
(2010)
ECS Meet
, vol.28
, pp. 63-71
-
-
Dube, A.1
Chakravarti, A.2
Takalkar, R.3
-
42
-
-
0033325124
-
NMOS drive current reduction caused by transistor layout and trench isolation induced stress
-
In
-
Scott G, Lutze J, Rubin M, et al. NMOS drive current reduction caused by transistor layout and trench isolation induced stress. In: IEDM Tech Dig, 1999. 827-830
-
(1999)
IEDM Tech Dig
, pp. 827-830
-
-
Scott, G.1
Lutze, J.2
Rubin, M.3
-
43
-
-
0033351004
-
Silicide induced pattern density and orientation dependent transconductance in MOS transistors
-
In
-
Steegen A, Stucchi M, Lauwers A, et al. Silicide induced pattern density and orientation dependent transconductance in MOS transistors. In: IEDM Tech Dig, 1999. 497-500
-
(1999)
IEDM Tech Dig
, pp. 497-500
-
-
Steegen, A.1
Stucchi, M.2
Lauwers, A.3
-
44
-
-
0842288292
-
Process-strained Si (PSS) CMOS technology featuring 3D strain engineering
-
In
-
Ge C, Lin C, Ko C, et al. Process-strained Si (PSS) CMOS technology featuring 3D strain engineering. In: IEDM Tech Dig, 2003. 73-76
-
(2003)
IEDM Tech Dig
, pp. 73-76
-
-
Ge, C.1
Lin, C.2
Ko, C.3
-
45
-
-
51949090508
-
45 nm high-k + metal gate strain-enhanced transistors
-
In
-
Auth C, Cappellani A, Chun J, et al. 45 nm high-k + metal gate strain-enhanced transistors. In: Symp VLSI Tech Dig, 2008. 128-129
-
(2008)
Symp VLSI Tech Dig
, pp. 128-129
-
-
Auth, C.1
Cappellani, A.2
Chun, J.3
-
46
-
-
64549106033
-
Gate length scaling and high drive current enabled for high performance SOI technology using high-k/metal gate
-
In
-
Henson K, Bu H, Na M, et al. Gate length scaling and high drive current enabled for high performance SOI technology using high-k/metal gate. In: IEDM Tech Dig, 2008. 645-648
-
(2008)
IEDM Tech Dig
, pp. 645-648
-
-
Henson, K.1
Bu, H.2
Na, M.3
-
47
-
-
52349118774
-
Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10 ps invertor delay
-
In
-
Kubicek S, Schram T, Rohr E, et al. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10 ps invertor delay. In: Symp VLSI Tech Dig, 2008. 130-131
-
(2008)
Symp VLSI Tech Dig
, pp. 130-131
-
-
Kubicek, S.1
Schram, T.2
Rohr, E.3
-
48
-
-
77954035917
-
Stress liner effects for 32-nm SOI MOSFETs with HKMG
-
Cai M, Ramani K, Belyansky M, et al. Stress liner effects for 32-nm SOI MOSFETs with HKMG. IEEE Trans Electr Dev, 2010, 57: 1706-1709
-
(2010)
IEEE Trans Electr Dev
, vol.57
, pp. 1706-1709
-
-
Cai, M.1
Ramani, K.2
Belyansky, M.3
-
49
-
-
47249084668
-
Novel channel-stress enhancement technology with eSiGe S/D and recessed channel on damascene gate process
-
In
-
Wang J, Tateshita Y, Yamakawa S, et al. Novel channel-stress enhancement technology with eSiGe S/D and recessed channel on damascene gate process. In: Symp VLSI Tech Dig, 2007. 46-47
-
(2007)
Symp VLSI Tech Dig
, pp. 46-47
-
-
Wang, J.1
Tateshita, Y.2
Yamakawa, S.3
-
50
-
-
50249098713
-
Extreme high-performance n-and p-MOSFETs boosted by dual-metal/high-k gate damascene process using top-cut dual stress liners on (100) substrates
-
In
-
Mayuzumi S, Wang J, Yamakawa S, et al. Extreme high-performance n-and p-MOSFETs boosted by dual-metal/high-k gate damascene process using top-cut dual stress liners on (100) substrates. In: IEDM Tech Dig, 2007. 293-296
-
(2007)
IEDM Tech Dig
, pp. 293-296
-
-
Mayuzumi, S.1
Wang, J.2
Yamakawa, S.3
-
51
-
-
46049084627
-
A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs
-
In
-
Kang C, Choi R, Song S, et al. A novel electrode-induced strain engineering for high performance SOI FinFET utilizing Si (110) channel for both N and PMOSFETs. In: IEDM Tech Dig, 2006. 885-888
-
(2006)
IEDM Tech Dig
, pp. 885-888
-
-
Kang, C.1
Choi, R.2
Song, S.3
-
52
-
-
57749202052
-
Extending dual stress liner process to high performance 32 nm node SOI CMOS manufacturing
-
In
-
Cai M, Greene B, Strane J, et al. Extending dual stress liner process to high performance 32 nm node SOI CMOS manufacturing. In: EEE SOI Conf, 2008. 17-18
-
(2008)
EEE SOI Conf
, pp. 17-18
-
-
Cai, M.1
Greene, B.2
Strane, J.3
-
53
-
-
77957861098
-
FDSOI CMOS with dielectrically-isolated back gates and 30 nm LG high-k/metal gate
-
In
-
Khater M, Cai J, Dennard R, et al. FDSOI CMOS with dielectrically-isolated back gates and 30 nm LG high-k/metal gate. In: Symp VLSI Tech Dig, 2010. 43-44
-
(2010)
Symp VLSI Tech Dig
, pp. 43-44
-
-
Khater, M.1
Cai, J.2
Dennard, R.3
-
55
-
-
41149178193
-
Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
-
In
-
Liow T, Tan K, Lee R, et al. Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement. In: Symp VLSI Tech Dig, 2006. 55-56
-
(2006)
Symp VLSI Tech Dig
, pp. 55-56
-
-
Liow, T.1
Tan, K.2
Lee, R.3
-
56
-
-
33847712546
-
Dual stress capping layer enhancement study for hybrid orientation FinFET CMOS technology
-
In
-
Shin K, Chui C, King T. Dual stress capping layer enhancement study for hybrid orientation FinFET CMOS technology. In: IEDM Tech Dig, 2005. 988-991
-
(2005)
IEDM Tech Dig
, pp. 988-991
-
-
Shin, K.1
Chui, C.2
King, T.3
-
57
-
-
77952372091
-
Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications
-
In
-
Cheng K, Khakifirooz A, Kulkarni P, et al. Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications. In: IEDM Tech Dig, 2009. 49-52
-
(2009)
IEDM Tech Dig
, pp. 49-52
-
-
Cheng, K.1
Khakifirooz, A.2
Kulkarni, P.3
-
58
-
-
64549145359
-
Electron transport in gate-all-around uniaxial tensile strained-Si nanowire n-MOSFETs
-
In
-
Hashemi P, Gomez L, Canonico M, et al. Electron transport in gate-all-around uniaxial tensile strained-Si nanowire n-MOSFETs. In: IEDM Tech Dig, 2008. 865-868
-
(2008)
IEDM Tech Dig
, pp. 865-868
-
-
Hashemi, P.1
Gomez, L.2
Canonico, M.3
-
59
-
-
50249175910
-
Experimental investigation on superior PMOS performance of uniaxial strained _110_ silicon nanowire channel by embedded SiGe source/drain
-
In
-
Li M, Yeo K, Yeoh Y, et al. Experimental investigation on superior PMOS performance of uniaxial strained 〈110〉 silicon nanowire channel by embedded SiGe source/drain. In: IEDM Tech Dig, 2007. 899-902
-
(2007)
IEDM Tech Dig
, pp. 899-902
-
-
Li, M.1
Yeo, K.2
Yeoh, Y.3
-
60
-
-
77957873634
-
Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs
-
In
-
Kobabyashi M, Mitard J, Irisawa T, et al. Experimental demonstration of high source velocity and its enhancement by uniaxial stress in Ge PFETs. In: Symp. VLSI Tech Dig, 2010. 215-216
-
(2010)
Symp. VLSI Tech Dig
, pp. 215-216
-
-
Kobabyashi, M.1
Mitard, J.2
Irisawa, T.3
-
61
-
-
77952663510
-
Engineering of strained III-V heterostructures for high hole mobility
-
In
-
Nainani A, Raghunathan S, Witte D, et al. Engineering of strained III-V heterostructures for high hole mobility. In: IEDM Tech Dig, 2009. 857-860
-
(2009)
IEDM Tech Dig
, pp. 857-860
-
-
Nainani, A.1
Raghunathan, S.2
Witte, D.3
|