Experimental study on voltage breakdown characteristic of IGBT

Asia-Pacific Power and Energy Engineering Conference, APPEEC

Volumn , Issue , 2011, Pages

  Wang, Bo ^a   Tang, Yong ^a   Chen, Ming ^a  

^a NAVAL UNIVERSITY OF ENGINEERING   (China)

Author keywords

Avalanche breakdown voltage; IGBT; Overvoltage breakdown; Resistance gate; Temperature

Indexed keywords

ABRUPT CHANGE; AVALANCHE BREAKDOWN; EXPERIMENTAL STUDIES; FAILURE MECHANISM; HIGH ELECTRIC FIELDS; HIGH VOLTAGE; IGBT; IGBT DEVICES; OVER-VOLTAGES; P-N JUNCTION; PEAK VOLTAGE; PHYSICS EQUATION; POWER ELECTRON; RESISTANCE GATE; SWITCHING TRANSIENT; VOLTAGE BREAKDOWN;

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

POWER QUALITY;

EID: 79955801660     PISSN: 21574839     EISSN: 21574847     Source Type: Conference Proceeding    
DOI: 10.1109/APPEEC.2011.5749116     Document Type: Conference Paper

References (5)

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5. Vinod Kumar Khanna. The Insulated Gate Bipolar Transistor-IGBT Theory and Design. IEEE Society Press.2003.