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Science China Information Sciences
Volumn 54, Issue 5, 2011, Pages 980-989
Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics
Author keywords

Electron tunneling; High k gate dielectrics; Impurities; Inelastic interactions; Phonons; Traps; Vibration modes
Indexed keywords

EID: 79955800566     PISSN: 1674733X     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11432-011-4228-5     Document Type: Review
Times cited : (5)
References (18)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.