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Applied Physics A: Materials Science and Processing

Volumn 103, Issue 2, 2011, Pages 485-491

A-site disorder effects in electron-doped manganite La0.4Ca 0.6MnO3

(8) Hu, N a,b Lu, C L c Wang, K F c Cheng, L a Liu, Y a Liu, J M c,d Xiong, R a Shi, J a,d

a WUHAN UNIVERSITY (China)

b HUBEI UNIVERSITY OF TECHNOLOGY (China)

c NANJING UNIVERSITY (China)

d INTERNATIONAL CENTRE FOR MATERIALS PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CHARGE ORDERED STATE; CHARGE-ORDERED ANTIFERROMAGNETIC; CHARGE-ORDERED MANGANITE; CHARGE-ORDERED PHASE; DISORDER EFFECT; ELECTRON DENSITIES; ELECTRON-DOPED; FERROMAGNETIC PHASE; NANO-SIZED; SPIN-GLASS STATE;

ANTIFERROMAGNETISM; BARIUM; CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; ELECTRON DENSITY MEASUREMENT; ELECTRONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MANGANITES; SEMICONDUCTOR DOPING; SPIN GLASS;

MANGANESE OXIDE;

EID: 79955790337 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6019-z Document Type: Article

Times cited : (6)

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