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Applied Physics Letters

Volumn 98, Issue 17, 2011, Pages

Rectifying behavior in La2/3Sr1/3MnO3 /MgO/SrRuO3 magnetic tunnel junctions

(3) Cheng, Hongguang a Liu, Zuli a Yao, Kailun a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILTERING PROPERTIES; FIRST-PRINCIPLES CALCULATION; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; ORDERS OF MAGNITUDE; POSITIVE CURRENT; QUANTUM DEVICE; QUANTUM TUNNELING; RECTIFYING BEHAVIORS; RECTIFYING EFFECT; REVERSE LEAKAGE CURRENT; TUNNEL TRANSISTORS;

DISTILLATION; MAGNETIC DEVICES; MANGANESE OXIDE; TRANSPORT PROPERTIES; TUNNEL DIODES;

TUNNEL JUNCTIONS;

EID: 79955693485 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3586242 Document Type: Article

Times cited : (15)

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