High-pressure Raman investigation of the semiconductor antimony oxide

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1708-1711

  Geng, Aihui ^a,b   Cao, Lihua ^a,b   Wan, Chunming ^a   Ma, Yanmei ^c  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

^c JILIN UNIVERSITY   (China)

Author keywords

Antimony trioxide; Diamond anvil cell; High pressure Raman

Indexed keywords

ANTIMONY OXIDES; ANTIMONY TRIOXIDE; DIAMOND ANVIL CELL; HIGH PRESSURE; HIGH-PRESSURE BEHAVIOR; HIGH-PRESSURE RAMAN; IN-SITU; LATTICE MODES; PRESSURE DEPENDENCE; RAMAN FREQUENCIES; RAMAN INVESTIGATIONS; ROOM TEMPERATURE; STRUCTURAL PHASE TRANSITION;

ANTIMONY COMPOUNDS; DIAMONDS; RAMAN SPECTROSCOPY; TOOLS;

HIGH PRESSURE ENGINEERING;

EID: 79955571608     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000786     Document Type: Article

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