Phase segregation and transformations in arsenic-implanted ZnO thin films

Journal of Physical Chemistry C

Volumn 115, Issue 17, 2011, Pages 8798-8807

  Krause, Matthias ^a,b   Vinnichenko, Mykola ^a   Shevchenko, Natalia ^a   Mücklich, Arndt ^a   Gemming, Sibylle ^a   Munnik, Frans ^a   Rogozin, Anatoli ^a   Kolitsch, Andreas ^a   Möller, Wolfhard ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH VACUUM; LATTICE STRUCTURES; P TYPE SEMICONDUCTOR; PARTICLE INDUCED X-RAY EMISSION; PHASE SEGREGATIONS; SECONDARY PHASE; SINGLE PHASE; ZNO; ZNO THIN FILM;

ARSENIC; EPITAXIAL FILMS; ISOTHERMAL ANNEALING; METALLIC FILMS; OPTICAL FILMS; OPTOELECTRONIC DEVICES; PHASE SEPARATION; RAMAN SPECTROSCOPY; SEMICONDUCTOR DEVICES; SOLID STATE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 79955550316     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1094307     Document Type: Article

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