SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 357, Issue 10, 2011, Pages 2187-2191

The effects of annealing temperature on photoluminescence of silicon nanoparticles embedded in SiNx matrix

(3) Jiang, Lihua a Zeng, Xiangbin a Zhang, Xiao a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

Photoluminescence; Quantum confinement effect; Silicon nanoparticles; SiNx matrix

Indexed keywords

ANNEALING TEMPERATURES; BONDING CONFIGURATIONS; CHEMICAL COMPOSITIONS; FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY; MATRIX; NANO-SIZE; PL SPECTROSCOPY; QUANTUM CONFINEMENT EFFECT; QUANTUM CONFINEMENT EFFECTS; RADIATIVE DEFECTS; SILICON NANOPARTICLES; SILICON NITRIDE FILM; SILICON SEMICONDUCTOR MATERIALS;

ANNEALING; DEPOSITION; FOURIER TRANSFORMS; NANOPARTICLES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM CONFINEMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

ABSORPTION SPECTROSCOPY;

EID: 79955479318 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.02.055 Document Type: Article

Times cited : (21)

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