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Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

Magnetoelectric memory using orthogonal magnetization states and magnetoelastic switching

(4) Tiercelin, Nicolas a Dusch, Yannick a Preobrazhensky, Vladimir a,b Pernod, Philippe a

a INSTITUT D ELECTRONIQUE (France)

b PROKHOROV GENERAL PHYSICS INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRESS; APPLIED STRESS; APPLIED VOLTAGES; EFFECTIVE ANISOTROPY; EQUILIBRIUM ORIENTATIONS; GIANT MAGNETOSTRICTION; MAGNETIC ELEMENTS; MAGNETIC POLARIZATIONS; MAGNETIZATION STATE; MAGNETO-ELASTIC; MAGNETOSTRICTIVE EFFECT; MATRIX; MEMORY CELL; MICROMAGNETIC SIMULATIONS; UNIAXIAL ANISOTROPY;

ELECTRIC RESISTANCE; MAGNETIC ANISOTROPY; MAGNETIZATION; MAGNETOSTRICTION; MAGNETOSTRICTIVE DEVICES; PIEZOELECTRICITY;

GIANT MAGNETORESISTANCE;

EID: 79955427241 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3559532 Document Type: Conference Paper

Times cited : (79)

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