Tunable magnetoresistance devices based on multiferroic heterostructures

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Liu, Ming ^a,c   Obi, Ogheneyunume ^a   Lou, Jing ^a   Li, Shandong ^b,c   Xing, Xing ^a   Yang, Guomin ^a   Sun, Nian X ^a  

^a Northeastern University   (United States)

^b FUJIAN NORMAL UNIVERSITY   (China)

^c ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC MAGNETORESISTANCE; COERCIVE FIELD; E-FIELD; HETEROSTRUCTURES; LEAD TITANATES; LEAD ZINC NIOBATE; MR DEVICES; MULTIFERROICS; ULTRA-THIN;

CRYSTALS; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTROSTATIC DEVICES; LEAD; MAGNETIC ANISOTROPY; MAGNETOELECTRONICS; NIOBIUM COMPOUNDS;

GIANT MAGNETORESISTANCE;

EID: 79955396914     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3561771     Document Type: Conference Paper

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