Power efficiency improvement of white phosphorescent organic light-emitting diode with thin double-emitting layers and hole-trapping mechanism

Japanese Journal of Applied Physics

Volumn 50, Issue 4 PART 2, 2011, Pages

  Juang, Fuh Shyang ^a   Hong, Lin Ann ^a   Wang, Shun Hsi ^a   Tsai, Yu Sheng ^a   Gao, Ming Hong ^a   Chi, Yun ^b   Shieh, Han Ping ^c   Hsu, Jen Sung ^d  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CIE COORDINATES; CO-DOPED; CO-DOPING; DRIVING VOLTAGES; EMISSION LAYERS; EMITTING LAYER; FORMATION ZONE; HIGH EFFICIENCY; HIGHEST OCCUPIED MOLECULAR ORBITAL ENERGY LEVELS; HOLE TRANSPORT LAYERS; HOLE TRANSPORTS; LIGHT EMITTING LAYERS; OPTIMAL STRUCTURES; PHOSPHORESCENT DOPANT; POWER EFFICIENCY; TRAPPING MECHANISMS;

DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; HOLE MOBILITY; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR ORBITALS; OSMIUM; PHOSPHORESCENCE; STRUCTURAL OPTIMIZATION;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 79955386755     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.04DK04     Document Type: Article

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