Novel III-V/Si hybrid laser structures with current injection across conductive wafer-bonded heterointerfaces: A proposal and analysis

IEICE Electronics Express

Volumn 8, Issue 8, 2011, Pages 596-603

  Tanabe, Katsuaki ^a   Iwamoto, Satoshi ^a   Arakawa, Yasuhiko ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Metals; Semiconductor lasers; Silicon photonics; Wafer bonding

Indexed keywords

METALS; SEMICONDUCTOR LASERS; SILICON PHOTONICS; SILICON WAFERS; WAVEGUIDES;

BONDING LAYERS; CURRENT INJECTIONS; HETERO INTERFACES; LATERAL CURRENTS; METAL THIN FILM; MODAL PROPAGATION; OPTICAL COUPLINGS; WAVEGUIDE MODE;

WAFER BONDING;

EID: 79955374386     PISSN: None     EISSN: 13492543     Source Type: Journal    
DOI: 10.1587/elex.8.596     Document Type: Article

References (12)

1. A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, "Electrically pumped hybrid AlGaInAs-silicon evanescent laser, " Opt. Express, vol. 14, no. 20, pp. 9203-9210, Oct. 2006.
2. J. Van Campenhout, P. Rojo-Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, "Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit," Opt. Ex- press, vol. 15, no. 11, pp. 6744-6749, May 2007.
3. K. Tanabe, M. Nomura, D. Guimard, S. Iwamoto, and Y. Arakawa, "Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity lasers on silicon substrate," Opt. Express, vol. 17, no. 9, pp. 7036-7042, April 2009.
4. K. Tanabe, D. Guimard, D. Bordel, S. Iwamoto, and Y. Arakawa, "Electrically pumped 1.3μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer trans- fer," Opt. Express, vol. 18, no. 10, pp. 10604-10608, May 2010.
5. COMSOL Multiphysics ver. 4.0.
6. P. B. Johnson and R. W. Christy, "Optical constants of the noble metals," Phys. Rev. B, vol. 6, no. 12, pp. 4370-4379, Dec. 1972.
7. L. A. Coldren and S. W. Corzine, "Diode Lasers and Photonic Integrated Circuits", Wiley, New Jersey, 1995.
8. W. Spitzer and H. Y. Fan, "Infrared absorption in n-type silicon," Phys. Rev., vol. 108, no. 2, pp. 268-271, Oct. 1957.
9. D. K. Schroder, R. N. Thomas, and J. C. "Swartz, Free carrier absorption in silicon," IEEE Trans. Electron Devices, vol. 25, no. 2, pp. 254-261, Feb. 1978.
10. RSOFT FullWAVE ver. 6.1.
11. K. Tanabe, A. Fontcuberta i Morral, H. A. Atwater, D. J. Aiken, and M. W. Wanlass, "Direct-bonded GaAs/InGaAs tandem solar cell," Appl. Phys. Lett., vol. 89, no. 10, pp. 102106-1-102106-3, Sept. 2006.
12. K. Tanabe, D. Guimard, and Y. Arakawa, unpublished.