Scintillation characteristic of in,Ga-Doped ZnO thin films with different dopant concentrations

Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 3, 2011, Pages

  Fujimoto, Yutaka ^a,b   Yanagida, Takayuki ^a   Sekiwa, Hideyuki ^c   Yokota, Yuui ^a   Chani, Valery ^a   Yoshikawa, Akira ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SOCIETY FOR THE PROMOTION OF SCIENCE   (Japan)

^c MITSUBISHI GAS CHEMICAL COMPANY INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY TIME; DOPANT CONCENTRATIONS; DOPED ZNO; GA-DOPED ZNO; PULSE X-RAYS; RAY EXCITATION; SCINTILLATION CHARACTERISTICS; SCINTILLATION LIGHT YIELD; ZNO FILMS;

CAMERAS; METALLIC FILMS; OPTICAL FILMS; SCINTILLATION; SEMICONDUCTOR DOPING; THIN FILMS; ZINC OXIDE;

GALLIUM;

EID: 79955159587     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.01BG04     Document Type: Conference Paper

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