Experimental study on the subthreshold swing of silicon nanowire transistors

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 11, 2010, Pages 7113-7116

  Zhang, Yanbo ^a   Xiong, Ying ^a   Yang, Xiang ^a   Wang, Ying ^a   Han, Weihua ^a   Yang, Fuhua ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b State Key Laboratory for Superlattices and Microstructures   (China)

Author keywords

Nanowire; Side gates; Silicon on insulator (SOl); Subthreshold swing (SS); Wrap gate

Indexed keywords

CROSS SECTION; DOPED SILICON; DRAIN-INDUCED BARRIER LOWERING; EXPERIMENTAL STUDIES; OFF-CURRENT; ON-CURRENTS; SIDE GATE; SILICON NANOWIRE FETS; SILICON NANOWIRE TRANSISTORS; SILICON-ON-INSULATOR (SOL); SPACE BETWEEN; SUBTHRESHOLD SWING; SUBTHRESHOLD SWING (SS); THERMAL OXIDATION; THICK GATE OXIDES; WRAP GATE;

ELECTRON BEAMS; FABRICATION; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOS DEVICES; SOLS; WET ETCHING;

NANOWIRES;

EID: 79954424101     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2811     Document Type: Conference Paper

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