Structural, ferroelectric and dielectric properties of In2O 3:Sn (ITO) on PbZr0.53Ti0.47O3 (PZT)/Pt and annealing effect

Journal of Alloys and Compounds

Volumn 509, Issue 20, 2011, Pages 6072-6076

  Kerkache, L ^a   Layadi, A ^a   Dogheche, E ^b   Remiens, D ^b  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

Dielectric properties; Ferroelectric thin films; ITO; PZT

Indexed keywords

AFM; ANNEALING EFFECTS; DIELECTRIC CONSTANTS; INDIUM TIN OXIDE; ITO; ITO THIN FILMS; PEROVSKITE PHASE; POLARIZATION HYSTERESIS LOOPS; PZT; RF-SPUTTERING; SEM; SI SUBSTRATES;

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; DIFFRACTION; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; INDIUM; INDIUM COMPOUNDS; PEROVSKITE; PLATINUM; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SURFACE STRUCTURE; TIN; TIN OXIDES; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 79954416442     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.03.022     Document Type: Article

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