Synthesis and gas sensing properties of flowers-like Pt-doped SnO2 nanomaterials

Gongneng Cailiao/Journal of Functional Materials

Volumn 42, Issue 1, 2011, Pages 139-143

  Liu, Cheng ^a   Liu, Ying ^a   Xie, Yu Tao ^b   Wang, Hui ^a   Ye, Jin Wen ^a   Wen, Xiao Gang ^a  

^a SICHUAN UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Gas sensitivity; Nano flowers; One pot method; Pt doped; SnO2

Indexed keywords

AVERAGE DIAMETER; GAS SENSING PROPERTIES; GAS SENSITIVITY; LATTICE DISTORTIONS; NANO-MATERIALS; ONE POT; ONE-POT METHOD; PEAK SHIFT; PT-DOPED; RAMAN PEAK; SEM; SNO2; TEM; WET-CHEMICAL METHOD;

NANOFLOWERS; NANORODS; NANOSENSORS; PLATINUM; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DOPING (ADDITIVES);

EID: 79953760343     PISSN: 10019731     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (34)

1. 2005, 36(9): 1415-1417.
2. Xu X X, Zhuang J, Wang X, et al.[J]. J Am Chem Soc, 2008, 130: 12527-12535.
3. Gubbala S, Chakrapani V, Kumar V, et al.[J]. Adv Funct Mater, 2008, 18: 2411-2418.
4. He Y S, Campbell J C, Murphy R C, et al.[J]. J Mater Res, 1993, 8: 3131-3134.
5. Jiang L H, Sun G Q, Zhou Z H, et al.[J]. J Phys Chem B, 2005, 109: 8774-8778.
6. Park M S, Wang G X, Kang Y M, et al.[J]. Angew Chem Int Ed, 2007, 46: 750-753.
7. Juttukonda V, Paddock R L, Raymond J E, et al.[J]. J Am Chem Soc, 2006, 128: 420-421.
8. Kuang Q, Lao C S, Wang Z L, et al.[J]. J Am Chem Soc, 2007, 129: 6070-6071.
9. Xi G C, Yu J H.[J]. Inorg Chem, 2010, 49: 2302-2309.
10. Yang H X, Qian J F, Chen X P, et al.[J]. J Phys Chem C, 2007, 111: 14067-14071.
11. Jiang L Y, Wu X L, Guo Y G, et al.[J]. J Phys Chem C 2009, 113, 14213-14219.
12. Wang Y F, Lei B X, Hou Y F, et al.[J]. Inorg Chem, 2010, 49: 1679-1686.
13. Tischner A, Kock A, Maier T.[J]. Microelectronic Engineering, 2010, 87: 1467-1470.
14. Sanju R, Somnath C R, Bhatnagar M C.[J]. Sensors and Actuators B, 2007, 122: 204-210.
15. 1996, 27(4): 347-349.
16. Anil D, Garje, Rohini C, et al.[J]. J Mater Sci: Mater Electron, 2008, 19: 547-552.
17. Ling T R, Tsai C M.[J]. Sensors and Actuators B, 2006, 119: 497-503.
18. Shen Y B, Toshinari Y, Liu Z F, et al.[J]. Journal of Alloys and Compounds, 2009, 488: 121-125.
19. Ryzhikov A S, Shatokhin A N, Putilin F N, et al.[J]. Sensors and Actuators B, 2005, 107: 387-391.
20. 2008, 3: 14-17.
21. Morazzoni F, Canevali C, Chiodini N, et al.[J]. Chem Mater, 2001, 13: 4355-4361.
22. 2002, 17(6): 1283-1288.
23. Zhou J X, Zhang M S, Hong J M, et al.[J]. Solid State Commun, 2006, 138: 242-246.
24. 1997, 27(10): 936-940.
25. Cheng G, Wu K, Zhao P T, et al.[J]. Journal of Crystal Growth, 2007, 309: 53-59.
26. Yu K N, Xiong Y H, Liu Y L, et al.[J]. Phys Rev B, 1997, 55: 2666-2671.
27. 2008, 14(6): 1044-1048.
28. Rajecv K, Srivastava, Lal P, et al.[J]. Sensors and Actuators B, 1994, 21: 213-218.
29. Hisao O, Hirokazu S, Takahashi M, et al.[J]. Sensors and Actuators B, 1993, 14: 677-678.
30. Kong L B, Shen Y S.[J]. Sensors and Actuators B, 1996, 30: 217-221.
31. Lupan, Shishiyanu S, Chow L, et al.[J]. Thin Solid Films, 2008, 516: 3338-3345.
32. Wang Y D, Mu Q Y, Wang G F, et al.[J]. Sensors and Actuators B, 2010, 145: 847-853.
33. Ramgir N S, Hwang Y K, Jhung S H, et al.[J]. Sensor and Actuator B, 2006, 114: 275-282.
34. Garje A D, Aiyer R C.[J]. J Mater Sci: Mater Electron, 2008, 19: 547-552.