SCOPUS 정보 검색 플랫폼

Nanoscale

Volumn 3, Issue 4, 2011, Pages 1485-1488

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces

(6) Wu, Jiang a Wang, Zhiming M a Dorogan, Vitaliy G a Li, Shibin a Mazur, Yuriy I a Salamo, Gregory J a

a UNIVERSITY OF ARKANSAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND EMISSION; EXCITON DECAY; GAAS; GAAS SURFACES; GAAS(1 0 0); HIGH DENSITY; HIGH INDEX; HIGH-INDEX SUBSTRATES; NEAR INFRARED; OPTICAL MEASUREMENT; QUANTUM DOT; QUANTUM DOTS; RANDOMLY DISTRIBUTED; TIME-RESOLVED PHOTOLUMINESCENCE; WIDEBAND APPLICATIONS;

EXCITONS; GALLIUM ARSENIDE; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL DATA PROCESSING; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

GALLIUM ALLOYS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INFRARED RADIATION; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; REFRACTOMETRY;

ARSENICALS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; INFRARED RAYS; LIGHTING; MATERIALS TESTING; PARTICLE SIZE; QUANTUM DOTS; REFRACTOMETRY;

EID: 79953739900 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c0nr00973c Document Type: Article

Times cited : (12)

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