Structurally-driven metal-insulator transition in Ca2Ru 1-xCrxO4 (0≤x<0.14): A single crystal X-ray diffraction study

Journal of Solid State Chemistry

Volumn 184, Issue 4, 2011, Pages 893-898

  Qi, T F ^a   Ge, M ^a,b   Korneta, O B ^a   Parkin, S ^a   De Long, L E ^a   Cao, G ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Metalinsulator transition; Single crystal X ray diffraction; Structurally driven; Structure distortion

Indexed keywords

CHROMIUM DOPING; CR-DOPING; ELECTRONIC DEVICE; ELECTRONIC STUDIES; FIRST-ORDER; HIGH QUALITY; METAL INSULATOR TRANSITION TEMPERATURE; METAL INSULATORS; PARENT COMPOUNDS; POTENTIAL APPLICATIONS; SINGLE CRYSTAL X-RAY DIFFRACTION; STRUCTURAL CHANGE; STRUCTURAL DISTORTIONS; STRUCTURALLY-DRIVEN; STRUCTURE DISTORTION; TRANSITION TEMPERATURE;

CHROMIUM; CRYSTAL STRUCTURE; DIFFRACTION; METAL INSULATOR BOUNDARIES; RUTHENIUM; SEMICONDUCTOR INSULATOR BOUNDARIES; SINGLE CRYSTALS; TEMPERATURE; TRANSPORT PROPERTIES; X RAY DIFFRACTION; X RAYS;

METAL INSULATOR TRANSITION;

EID: 79953669201     PISSN: 00224596     EISSN: 1095726X     Source Type: Journal    
DOI: 10.1016/j.jssc.2011.02.020     Document Type: Article

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