Stability of hydrogen-terminated surfaces of silicon nanowires in aqueous solutions

Journal of Physical Chemistry C

Volumn 115, Issue 10, 2011, Pages 3866-3871

  Peng, Chunzeng ^a,b   Gao, Jing ^a   Wang, Suidong ^a   Zhang, Xiaohong ^c   Zhang, Xinping ^b   Sun, Xuhui ^a  

^a SOOCHOW UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; H-TERMINATED SURFACE; HIGH CONCENTRATION; HIGH PH; HYDROGEN-TERMINATED SURFACES; LI-ION BATTERIES; MULTISTEP PROCESS; NANO-DEVICES; OXIDATION PROCESS; OXIDATION RATES; PH VALUE; POOR STABILITY; ROOM TEMPERATURE; SILICON NANOWIRES; SOLUTION PH; SURFACE SPECIES; SURFACE STABILITY;

HYDROGEN; NANOWIRES; OXIDATION; OXYGEN; PH; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SOLUTIONS; STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON WAFERS;

EID: 79953223776     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp109963z     Document Type: Article

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