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European Physical Journal B

Volumn 79, Issue 4, 2011, Pages 495-502

Pressure dependent mechanical and thermodynamical properties of Hg 0.91Mn 0.09Te semiconductor

(4) Varshney, D a Sapkale, R a Dagaonkar, G J a Varshney, M b

a DEVI AHILYA UNIVERSITY (India)

b MB Khalsa College (India)

Author keywords

[No Author keywords available]

Indexed keywords

B1 PHASE; BULK MODULUS; ELASTIC ANISOTROPY; ELASTIC PROPERTIES; ELASTIC WAVE VELOCITY; EXPERIMENTAL CONFIRMATION; EXPERIMENTAL DATA; INTERIONIC INTERACTIONS; POISSON'S RATIO; PRESSURE DEPENDENCE; PRESSURE DEPENDENT; ROCK SALT; SHEAR MODULUS; STRUCTURAL PHASE TRANSITION; TE COMPOUNDS; THEORETICAL PREDICTION; THERMODYNAMICAL PROPERTIES; THREE-BODY FORCE; TRANSITION PRESSURE; VAN DER WAALS INTERACTION; VOLUME DISCONTINUITY; WAVE VELOCITY; ZINC-BLENDE;

ACOUSTIC WAVE VELOCITY; DEBYE TEMPERATURE; ELASTIC MODULI; MANGANESE; MECHANICAL PROPERTIES; PHASE DIAGRAMS; POISSON RATIO; SEMICONDUCTING TELLURIUM; SHEAR FLOW; VAN DER WAALS FORCES; WAVE PROPAGATION;

PHASE TRANSITIONS;

EID: 79953193693 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2011-10641-1 Document Type: Article

Times cited : (5)

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