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Volumn 109, Issue 5, 2011, Pages

Electronic structure of TiS2 and its electric transport properties under high pressure

(8) Liu, Bao a Yang, Jie a,b Han, Yonghao a Hu, Tingjing a Ren, Wanbin a Liu, Cailong a Ma, Yanzhang a,c Gao, Chunxiao a

a JILIN UNIVERSITY (China)

b AVIATION UNIVERSITY OF AIR FORCE (China)

c Texas Tech University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; ELECTRIC TRANSPORT PROPERTIES; ELECTRONIC CONCENTRATION; FIRST-PRINCIPLES CALCULATION; HIGH PRESSURE; IMPURITY LEVEL; IN-SITU; PRESSURE CURVE; PRESSURE RESPONSE; SEMI-METALS; TRANSPORT BEHAVIOR; TRANSPORT PARAMETERS;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; TRANSPORT PROPERTIES;

BEHAVIORAL RESEARCH;

EID: 79953009328 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3552299 Document Type: Article

Times cited : (42)

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