Ab initio study of GaN periodically substituted by transition metal for intermediate band materials

Physica Status Solidi (B) Basic Research

Volumn 248, Issue 4, 2011, Pages 964-968

  Wang, Jian ^a   Xing, Yucheng ^a   Luo, Yi ^a  

^a TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY   (China)

Author keywords

ab initio calculations; Deep levels; Density of states; GaN; Intermediate bands; Transition metals

Indexed keywords

EID: 79952996754     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201046474     Document Type: Article

References (16)

1. W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961).
2. R. R. King, D. C. Law, K. M. Edmondson, C. M. Fetzer, G. S. Kinsey, H. Yoon, R. A. Sherif, and N. H. Karam, Appl. Phys. Lett. 90, 183516 (2007).
3. A. Luque and A. Mart, Phys. Rev. Lett. 78, 5014 (1997).
4. A. Luque and A. Mart, Prog. Photovolt., Res. Appl. 9, 73 (2001).
5. C. Tablero and P. Wahnon, Appl. Phys. Lett. 82, 151 (2003).
6. C. Tablero, Comput. Mater. Sci. 36, 263 (2006).
7. P. Palacios, K. Sánchez, J. C. Conesa, J. J. Fernández, and P. Wahnón, Thin Solid Films 515, 6280 (2007).
8. C. Tablero, Sol. Energy Mater. Sol. Cells 90, 588 (2006).
9. C. Tablero, Comput. Mater. Sci. 44, 303 (2008).
10. C. Tablero, Sol. Energy Mater. Sol. Cells 90, 1734 (2006).
11. C. Tablero, Solid State Commun. 133, 97 (2005).
12. K. Sato, P. H. Dederichs, and H. Katayama-Yoshida, Europhys. Lett. 61, 403 (2003).
13. P. Hohenberg and W. Kohn, Phys. Rev. B 136, 864 (1964).
14. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 66 (1980).
15. W. Kohn and L. J. Sham, Phys. Rev. A 140, 1133 (1965).
16. N. Troullier and J. L. Martins, Phys. Rev. B 43, 1993 (1991).