Electrodeposition of group-IIIA doped ZnO as a transparent conductive oxide

ECS Transactions

Volumn 25, Issue 15, 2009, Pages 93-102

  Han, Xiaofei ^a   Han, Kunhee ^a   Tao, Meng ^a  

^a University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMORPHOUS SILICON; ELECTRODEPOSITION; ELECTRODES; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; OXIDE MINERALS; SEMICONDUCTOR DOPING; THIN FILM SOLAR CELLS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

DOPING MECHANISM; GA SUBSTITUTIONS; HIGH THROUGHPUT; HIGH TRANSMITTANCE; LARGE-AREA PROCESSING; POST DEPOSITION ANNEALING; SOLUTION-BASED DEPOSITION; TRANSPARENT CONDUCTIVE OXIDES;

MAGNETIC SEMICONDUCTORS;

EID: 79952760146     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3300426     Document Type: Conference Paper

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