Growth of 450 mm diameter semiconductor grade silicon crystals

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 193-195

  Lu, Zheng ^a   Kimbel, Steven ^a  

^a MEMC Electronic Materials Inc   (United States)

Author keywords

A2. Czochralski method; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

B2. SEMICONDUCTING SILICON; CRYSTAL GROWTH PROCESS; CZOCHRALSKI METHODS; DISLOCATION FREE CRYSTALS; EQUIPMENT MANUFACTURERS; HOT ZONE; RESEARCH AND DEVELOPMENT; SEMI-CONDUCTOR WAFER; SILICON CRYSTAL; WAFER QUALITY;

CRYSTAL GROWTH FROM MELT; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; SINGLE CRYSTALS;

SEMICONDUCTING SILICON;

EID: 79952738223     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.122     Document Type: Conference Paper

References (3)

1. International Technology Roadmap of Standard of Semiconductors 2009 edition, ITRS, 2009, Introduction, p. 13.
2. ISMI 450 mm Transition Program Status Update for ITRS IRC, ISMI Symposium, Seoul, 2008.
3. Y. Shiraishi, K. Takano, J. Matsubara, T. Iida, N. Takase, N. Machida, M. Kuramoto, and H. Yamagishi J. Crystal Growth 229 2001 17