Effects of solid-state reaction synthesis processing parameters on thermoelectric properties of Mg2Si

Journal Wuhan University of Technology, Materials Science Edition

Volumn 19, Issue 2, 2004, Pages 55-56

  Jiang, Hong yi ^a   Long, Hai shan ^a   Zhang, Lian meng ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Mg2 Si based compounds; processing parameters; solid state reaction

Indexed keywords

HIGH TEMPERATURE APPLICATIONS; MAGNESIUM COMPOUNDS; PARTICLE SIZE; SILICON COMPOUNDS; TELLURIUM; TEMPERATURE; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

HOLDING TIME; MG2 SI BASED COMPOUND; PARTICLES SIZES; PROCESSING PARAMETERS; SI MATRIX; SI-BASED; SOLID-STATE REACTION SYNTHESIS; SOLID-STATE REACTIONS; THERMOELECTRIC PROPERTIES;

SOLID STATE REACTIONS;

EID: 79952690910     PISSN: 10002413     EISSN: 19930437     Source Type: Journal    
DOI: 10.1007/BF03000169     Document Type: Article

References (4)

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