On the role of non-bridging oxygen centers in the red luminescence emission from silicon nanocrystals

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 974-978

  Borsella, Elisabetta ^a   D'Amato, Rosaria ^a   Fabbri, Fabio ^a   Falconieri, Mauro ^b   Trave, Enrico ^c   Bello, Valentina ^d   Mattei, Giovanni ^d   Nie, Yaru ^e   Wang, Dayang ^e  

^a ENEA   (Italy)

^b ENEA   (Italy)

^c CA' FOSCARI UNIVERSITY OF VENICE   (Italy)

^d UNIVERSITY OF PADOVA   (Italy)

^e MAX PLANCK INSTITUTE OF COLLOIDS AND INTERFACES   (Germany)

Author keywords

Defects; Luminescence; Nanocrystals; Quantum confinement; Silicon

Indexed keywords

AMORPHOUS SILICA; CHEMICAL ENVIRONMENT; CONFINED EXCITONS; EMISSION ENERGIES; EXPONENTIAL DECAYS; EXPONENTIAL TIME; NANOCRYSTALLINE SI; NEAR INFRARED LUMINESCENCE; NON-BRIDGING OXYGEN; NONBRIDGING OXYGEN HOLE CENTER; PL EMISSION; RED LUMINESCENCE; SI NANOCRYSTAL; SI NANOSTRUCTURES; SILICON NANOCRYSTALS; SIZE EFFECTS; SPECTROSCOPIC PROPERTY; STRETCHED EXPONENTIAL; TIME DECAY;

LUMINESCENCE; MATHEMATICAL MODELS; NANOCRYSTALLINE SILICON; NANOCRYSTALS; OXYGEN; PYROLYSIS; QUANTUM CONFINEMENT; SILICA; SILICON OXIDES; SURFACE DEFECTS;

AMORPHOUS SILICON;

EID: 79952683044     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000553     Document Type: Article

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