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Volumn 98, Issue 10, 2011, Pages

Room temperature electrical injection and detection of spin polarized carriers in silicon using MgO tunnel barrier

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL INJECTION; ELECTRONIC DEVICE; MAGNETIC FIELD DEPENDENCES; MGO BARRIER; ROOM TEMPERATURE; SPIN-ACCUMULATIONS; SPIN-DIFFUSION LENGTH; SPIN-INJECTION; SPIN-POLARIZED CARRIERS; TUNNEL BARRIER;

EID: 79952670923     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3564889     Document Type: Article
Times cited : (36)

References (18)
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    • note
    • If the Si was n-type, it would produce spin-dependent imbalance in the electron-population.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.