Memory effect in magnetic nanowire arrays

Advanced Materials

Volumn 23, Issue 11, 2011, Pages 1393-1397

  Kou, Xiaoming ^a   Fan, Xin ^a   Dumas, Randy K ^b   Lu, Qi ^a   Zhang, Yaping ^a   Zhu, Hao ^c   Zhang, Xiaokai ^c   Liu, Kai ^b   Xiao, John Q ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c Spectrum Magnetics LLC   (United States)

Author keywords

Data storage; Magnetic materials; Magnetic nanowires; Magnetic recording

Indexed keywords

DATA STORAGE; DETECTION SCHEME; FIRST-ORDER REVERSAL CURVES; LOW COSTS; MAGNETIC DIPOLE INTERACTION; MAGNETIC NANOWIRE ARRAYS; MAGNETIC NANOWIRES; MEMORY EFFECTS; SWITCHING FIELD DISTRIBUTION; THEORETICAL EXPLANATION;

DATA STRUCTURES; MAGNETIC FIELDS; MAGNETIC MATERIALS; MAGNETIC RECORDING; NANOWIRES;

MAGNETIC STORAGE;

ALUMINUM OXIDE; NANOWIRE; NICKEL;

ARTICLE; CHEMISTRY; MAGNETISM;

ALUMINUM OXIDE; MAGNETICS; NANOWIRES; NICKEL;

EID: 79952670261     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201003749     Document Type: Article

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