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Volumn 98, Issue 10, 2011, Pages

Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films

(12) Mairoser, T a Schmehl, A a Melville, A b Heeg, T b Zander, W c Schubert, J c Shai, D E b Monkman, E J b Shen, K M b Regier, T Z d Schlom, D G b Mannhart, J a

a UNIVERSITY OF AUGSBURG (Germany)

b School of Operations Research and Industrial Engineering (United States)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

d CANADIAN LIGHT SOURCE INC (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIER DENSITY; FERROMAGNETIC SEMICONDUCTOR; HIGH SUBSTRATE TEMPERATURE; RARE EARTH DOPING; SUBSTRATE TEMPERATURE; VARIOUS SUBSTRATES;

CARRIER CONCENTRATION; CURIE TEMPERATURE; EPITAXIAL FILMS; EPITAXIAL GROWTH; GADOLINIUM; SEMICONDUCTOR DOPING;

SUBSTRATES;

EID: 79952635846 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3563708 Document Type: Article

Times cited : (17)

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