Nonlinear transmission lines on silicon using optimized varactors

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 516-519

  Birk, Martin ^a   Kibbel, Horst ^b   Schumacher, Hermann ^a  

^a UNIVERSITY OF ULM   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; TRANSMISSION LINE THEORY; VARACTORS;

EQUIVALENT BANDWIDTH; GAAS SUBSTRATES; HIGH RESISTIVITY SILICON; MILLIMETER-WAVE INTEGRATED CIRCUITS; NONLINEAR TRANSMISSION LINES; SCHOTTKY VARACTORS; SINE-WAVE;

ELECTRIC LINES;

EID: 79952620631     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. M. 1. W. Rodwell, S. T. Allen, R. Y. Yu, M. G. Case, M. Reddy, E. Carmen, J. Pusl, M. Kamegawa, Y. Konishi and R. Pullala, "Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics", IEEE Proc., vol. 82, no. 7, pp. 1037-1058, July 1994
2. M. Birk, H. Kibbel, C. Warns, A. Trasser and H. Schumacher, "Efficient Transient Compression using an all-Silicon Nonlinear Transmission Line", IEEE Microwave and Guided Wave Lett., vol. 8, no. 5, May 1998
3. D. W. Van der Weide, "Delta-doped Schottky diode nonlinear transmission lines for 480-fs 3. 5 V transitions", Appl. Phys. Lett., vol. 65, no. 7, August 1994
4. U. Bhattacharya, S. T. Allen and M. J. W. Rodwell, "DC-725 GHz Sampling Circuits and subpicosecond nonlinear transmission lines using elevated coplanar waveguide", IEEE Microwave and Guided Wave Lett., vol. 5, Feb. 1995