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Journal of Crystal Growth

Volumn 319, Issue 1, 2011, Pages 4-7

Melt growth of high-resistivity CdZnTe crystals by controlling Cd over-pressures

(2) Su, Ching Hua a Lehoczky, S L a

a NASA MARSHALL SPACE FLIGHT CENTER (United States)

Author keywords

A1. Directional solidification; B2. Semiconducting cadmium compounds

Indexed keywords

B2. SEMICONDUCTING CADMIUM COMPOUNDS; BRIDGMAN; CDZNTE CRYSTALS; COOLING PROCEDURE; DIRECTIONAL SOLIDIFICATION; DOPANT CONCENTRATIONS; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; MELT GROWTH; OVER-PRESSURES; PROCESS MODIFICATIONS; RESERVOIR TEMPERATURES; STARTING MATERIALS; VACUUM ENVIRONMENT;

CADMIUM; CADMIUM ALLOYS; CRYSTALS; ELECTRIC CONDUCTIVITY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SOLIDIFICATION; VACUUM APPLICATIONS;

CADMIUM COMPOUNDS;

EID: 79952576804 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.177 Document Type: Article

Times cited : (15)

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