High throughput ALD of Al2O3 layers for surface passivation of silicon solar cells

ECS Transactions

Volumn 33, Issue 2, 2010, Pages 441-446

  Kuznetsov, V I ^a   Granneman, E H A ^a   Vermont, P ^a   Vanormelingen, K ^a  

^a Levitech BV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATMOSPHERIC MOVEMENTS; CHARGE CARRIERS; FILM PREPARATION; PASSIVATION; SILICON SOLAR CELLS; SILICON WAFERS;

AL2O3 FILMS; HIGH THROUGHPUT; LIFETIME VALUES; MINORITY CARRIER LIFETIMES; ON-WAFER; SI WAFER; SURFACE PASSIVATION; SURFACE PREPARATION;

ATOMIC LAYER DEPOSITION;

EID: 79952566345     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3485280     Document Type: Conference Paper

References (6)

1. B. Hoex, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels, Journal of Applied Physics 104, 113703 (2008)
2. th EU PVSEC, 2DP.2.1, Valencia (2010)
3. J. Benick, B. Hoex, G. Dingemans, W.M.M. Kessels, A. Richter, M. Hermle and S. W. Glunz, Proceedings of the 24th European PV Solar Energy Conference, Hamburg (2009)
4. J. Schmidt, B. Veith, and R. Brendel, Phys. Status Solidi RRL 3, No. 9, 287-289 (2009)
5. V.I. Kuznetsov, A.B. Storm, and E.H.A. Granneman, Proceedings of 7th International Conference on Advanced Thermal Processing of Semiconductors, Colorado Springs, USA, 252 (1999)
6. th IEEE Photovoltaic Specialists Conference, V1 31-05, Hawaii (2010)