Innovative scheme for selective carbon nanotubes integration in via structures

Microelectronic Engineering

Volumn 88, Issue 5, 2011, Pages 833-836

  Fayolle, M ^a   Pontcharra, J ^a   Dijon, J ^b   Fournier, A ^b   Okuno, H ^b   Quesnel, E ^b   Muffato, V ^b   Jayet, C ^a   Lugand, J F ^a   Gautier, P ^a   Vandroux, L ^a   Huet, S ^a   Grampeix, H ^a   Yckache, K ^a   Mariolle, D ^a   Billon, T ^a  

^a CEA LETI   (France)

^b CEA GRENOBLE   (France)

Author keywords

Carbon nanotubes; Integration; Interconnects; Nanomaterials

Indexed keywords

BOTTOM ELECTRODES; CONDUCTIVE AFM; DOPED SILICON; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; INTEGRATION SCHEME; INTERCONNECTS; NANO-MATERIALS; TOP SURFACE;

CARBON NANOTUBES; ELECTRIC PROPERTIES; GROWTH (MATERIALS); NANOSTRUCTURED MATERIALS; POLISHING; POLYSILICON; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SURFACES; TITANIUM NITRIDE;

INTEGRATION;

EID: 79952487190     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.07.038     Document Type: Conference Paper

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