Thermoelectric materials based on intermediate phases in the systems formed by chalcogenides of lead and bismuth

Inorganic Materials: Applied Research

Volumn 1, Issue 2, 2010, Pages 83-91

  Shelimova, L E ^a   Karpinskii, O G ^a   Konstantinov, P P ^b   Avilov, E S ^a   Kretova, M A ^a   Nikhezina, I Y ^a   Zemskov, V S ^a  

^a BAIKOV INSTITUTE OF METALLURGY AND MATERIALS SCIENCE   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Crystal structures; Homologous series; Layered chalcogenides; Semiconductors; Systems PbTe Bi2Te 3 and PbSe Bi2Se3; Ternary compounds; Thermoelectric materials; Thermoelectric properties

Indexed keywords

HOMOLOGOUS SERIES; LAYERED CHALCOGENIDES; SEMICONDUCTORS; SYSTEMS PBTE-BI2TE 3 AND PBSE-BI2SE3; TERNARY COMPOUNDS; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES;

BINARY ALLOYS; BISMUTH; CHALCOGENIDES; MATERIALS PROPERTIES; STRUCTURAL PROPERTIES; TERNARY ALLOYS; TERNARY SYSTEMS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

CRYSTAL STRUCTURE;

EID: 79952406464     PISSN: 20751133     EISSN: 2075115X     Source Type: Journal    
DOI: 10.1134/S2075113310020024     Document Type: Article

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