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the thickness L=300 μm. Fresnel transimission coefficients tGaP =0.46 for the GaP crystal surface and tSi =0.7 for the Si wafer were used
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the thickness L=300 μm. Fresnel transimission coefficients tGaP =0.46 for the GaP crystal surface and tSi =0.7 for the Si wafer were used.
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