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Volumn 519, Issue 10, 2011, Pages 3276-3282

Transparent Ga and Zn co-doped In2O3 electrode prepared by co-sputtering of Ga:In2O3 and Zn:In 2O3 targets at room temperature

(2) Jeong, Jin A a Kim, Han Ki a

a Kyung Hee University (South Korea)

Author keywords

Co sputtering; DC magnetron sputtering; Indium gallium oxide; Indium zinc oxide; Indium gallium co doped zinc oxide; Resistivity; Scanning electron microscopy; Transmittance; X ray diffraction

Indexed keywords

COSPUTTERING; DC MAGNETRON SPUTTERING; INDIUM ZINC OXIDE; RESISTIVITY; TRANSMITTANCE;

AMORPHOUS FILMS; ATMOSPHERIC TEMPERATURE; DC POWER TRANSMISSION; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRODES; FILM PREPARATION; INDIUM; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; SURFACE STRUCTURE; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79952314173 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.12.034 Document Type: Article

Times cited : (15)

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