Amorphization of crystalline phase change material by ion implantation

Materials Research Society Symposium Proceedings

Volumn 1251, Issue , 2010, Pages 105-110

  Raoux, Simone ^a,b   Cohen, Guy M ^b   Shelby, Robert M ^c   Cheng, Huai Yu ^a,d   Jordan Sweet, Jean L ^b  

^a IBM   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM ALMADEN RESEARCH CENTER   (United States)

^d MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANTIMONY COMPOUNDS; CRYSTALLINE MATERIALS; GERMANIUM COMPOUNDS; ION IMPLANTATION; IONS; PHASE CHANGE MEMORY; TELLURIUM COMPOUNDS; X RAY DIFFRACTION;

CRYSTALLINE PHASE; CRYSTALLIZATION TEMPERATURE; DEPOSITED MATERIALS; GERMANIUM ION IMPLANTATION; HIGH DOSE ION-IMPLANTED; MELT-QUENCHING; REFLECTIVITY MEASUREMENTS; TIME-RESOLVED XRD;

PHASE CHANGE MATERIALS;

EID: 79951991180     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1251-h02-06     Document Type: Conference Paper

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