Manganese-doped CdGeAs2, ZnGeAs2 and ZnSiAs 2 chalcopyrites: A new advanced materials for spintronics

Solid State Phenomena

Volumn 168-169, Issue , 2011, Pages 31-34

  Morozov, A ^a   Koroleva, L ^a   Zashchirinskii, D ^a   Khapaeva, T ^a   Marenkin, S ^b   Fedorchenko, I ^b   Szymczak, R ^c   Krzymanska, B ^c  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY   (Russian Federation)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

Chalcopirites; Curie temperature; Spintronics; Spontaneous magnetization; Superparamagnetic cluster

Indexed keywords

CURIE TEMPERATURE; ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; NANOTECHNOLOGY; SUPERPARAMAGNETISM; ARSENIC COMPOUNDS; CARRIER MOBILITY; GERMANIUM COMPOUNDS; MANGANESE; MANGANESE COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SPINTRONICS; TEMPERATURE DISTRIBUTION;

ADVANCED MATERIALS; CHALCOPIRITES; DILUTE MAGNETIC SEMICONDUCTORS; ELECTRICAL RESISTIVITY; EXCHANGE AND SUPEREXCHANGE INTERACTIONS; FERROMAGNETS; MN IONS; MN-DOPED; P-TYPE CONDUCTIVITY; ROOM TEMPERATURE; SPIN-GLASS-LIKE STATE; SPINTRONICS; SPONTANEOUS MAGNETIZATION; SUPERPARAMAGNETIC CLUSTERS; SUPERPARAMAGNETS; TEMPERATURE DEPENDENCE; TWO-STATE; P TYPE CONDUCTIVITY;

MANGANESE; SEMICONDUCTING ZINC COMPOUNDS;

EID: 79951881173     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.168-169.31     Document Type: Conference Paper

References (12)

1. K.M. Edmonds, K.Y. Wang, R.P. Campion, A.C. Neumann, N.R.S. Farley, B. L. Gallagher, and C.T. Foxon: Appl. Phys. Lett. Vol. 4991 (2002), p. 81.
2. K.M. Edmonds, P. Boguslawski, K.Y. Wang, R.P. Campion, S.N. Novikov, N.R.S. Farley, B.L. Gallagher, C.T. Foxon, M. Sawicki, T. Dietl and M. Buongiorno Nardelli, J. Bernholc; Phys. Rev. Lett. Vol. 92 (2004), p. 03720.
3. G.A. Medvedkin, T. Ishibashi, T. Nishi, K. Hayata, Y. Hasegawa and K. Sato: Jpn J. Appl. Phys. Vol. 10A (2000), p. L949.
4. G.A. Medvedkin, K. Hirose, T. Ishibashi, T. Nishi, V.G. Voevodin and K. Sato: J Cryst Growth Vol. 609 (2002), p. 236.
5. S. Choi, G.-B. Cha, S.C. Hong, S. Cho, Y. Kim, J.B. Ketterson, S.-Y. Jeong and G.-C. Yi: Solid State Commun. Vol. 165 (2002), p. 122.
6. R.V. Demin, L.I. Koroleva, S.F. Marenkin, S.G. Mihailov, V.M. Novotortsev, V.T. Kalinnikov, T.G. Aminov, R. Szymzak, G. Szymzak and M. Baran: 2004 Letter in JSP Vol. 81 (2004), p.30.
7. L.I. Koroleva, V.Y. Pavlov, D.M. Zashchirinskii, S.F. Marenkin, S.A. Varnavskii, R. Szymzak, V. Dobrowolski and L. Kilanskii: Solid State Phys. Vol. 49 (2007), p. 2022.
8. L.I. Koroleva, D.M. Zashchirinskii, T.M. Khapaeva, S.F. Marenkin, I.V. Fedorchenko, R. Szymzak, B. Krzumanska, V. Dobrowolski and L. Kilanskii: Solid State Phys. Vol. 51 (2009), p. 303.
9. V.M. Novotortsev, S.F. Marenkin, L.I. Koroleva, T.A. Kupriyanova, I.V. Fedorchenko, R. Szymczak, L. Kilanski, V. Domuchowski and A.V. Kochura: J. Inorg. Chem. Vol. 54, (2009), p. 1350.
10. H. Akai: Phys. Rev. Lett. Vol. 81 (1998) p. 3002;
11. J. Phys. Soc. Jpn. Vol. 69 (Suppl. A) (2000), p. 112.
12. E.Z. Meilikov and R.M. Farzetdinova: 2007 Phys. Rev. Vol. B 75 (2007) p. 052402.