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Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

Temperature- and wavelength-dependent two-photon and free-carrier absorption in GaAs, InP, GaInAs, and InAsP

(4) Krishnamurthy, Srini a Yu, Zhi Gang a Gonzalez, Leonel P b Guha, Shekhar b

a SRI INTERNATIONAL (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND STRUCTURE ANALYSIS; COMMUNICATION WAVELENGTHS; DIODE LASERS; DIRECT ABSORPTION; EXCITED ELECTRONS; EXCITED STATE ABSORPTION; FREE CARRIER ABSORPTION; FULL BAND; GAAS; INP; NON-LINEAR PARAMETERS; TWO PHOTON; TWO-PHOTON ABSORPTIONS;

ABSORPTION; ENERGY GAP; EXCITED STATES; GALLIUM ARSENIDE; LIGHT TRANSMISSION; PHOTONS; SEMICONDUCTING GALLIUM; TWO PHOTON PROCESSES;

GALLIUM ALLOYS;

EID: 79951834264 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533775 Document Type: Article

Times cited : (47)

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