High on-off ratio bilayer graphene complementary field effect transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Majumdar, Kausik ^a   Murali, Kota V R M ^b   Bhat, Navakanta ^a   Xia, Fengnian ^c   Lin, Yu Ming ^c  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b IBM RESEARCH INDIA   (India)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BI-LAYER; CURRENT SATURATION; EXPERIMENTAL DATA; GATE LENGTH; NON-EQUILIBRIUM GREEN'S FUNCTION; ON-OFF RATIO; S/D ENGINEERING; SERIES RESISTANCES; SOURCE AND DRAINS; SUBTHRESHOLD SLOPE;

ELECTRON DEVICES; ELECTRON MULTIPLIERS; GRAPHENE; LOGIC DEVICES; MESFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 79951831849     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703464     Document Type: Conference Paper

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