Electrical properties of Si-XII and Si-III formed by nanoindentation

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2010, Pages 105-106

  Wang, Y ^a   Ruffell, S ^a   Sears, K ^a   Knights, A P ^b   Bradby, J E ^a   Williams, J S ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND CUBIC PHASE; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; NARROW BAND GAP; ROOM TEMPERATURE; SEMI-METALS; SILICON DEVICES; THEORETICAL STUDY;

BORON; ELECTRIC PROPERTIES; METASTABLE PHASES; MICROELECTRONICS; NANOINDENTATION; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTING SILICON;

EID: 79951751345     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2010.5699682     Document Type: Conference Paper

References (5)

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3. J. E. Bradby, J. S. Williams, J. Wong-Leung, M. V. Swain and P. Munroe, Applied Physics Letters, 2000. 77: p. 3749.
4. V. Domnich and Y. Gogotsi, Reviews on Advanced Materials Science, 2002. 3: p. 1-36.
5. S. Ruffell. J. E. Bradby and J. S. Williams, Journal of Materials Research, 2007. 22(3): p. 578.